Odyssey Semiconductor Investor Relations

The Leader in Vertical GaN for Power Applications

Latest Presentation

Investor Presentation

Latest News

Odyssey Semiconductor Technologies Enters into Definitive Agreement to Sell Assets For $9.52 Million

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Odyssey Semiconductor Technologies Reports Fourth Quarter and Full Year 2023 Financial Results

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Odyssey Semiconductor Technologies Announces CEO Transition

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Latest Financial Results

FY 2023

Fiscal Year Ended December 31, 2023

Latest Annual Filing

For Fiscal Year Ending December 31, 2022

Scientist in white suit with face protection (mask and glasses) looking through a microscope

Company Overview

Odyssey Semiconductor, Inc was founded in 2019 by Rick Brown and James R. Shealy, in Ithaca, NY with the aim of replacing silicon carbide with gallium nitride as the dominant high-performance power switching semiconductor material of choice.

The material properties of gallium nitride (GaN) make it a far superior choice to silicon carbide (SiC) for power switching applications. To date however, GaN processing technology has not been able to realize a viable GaN high voltage switching transistor operating above 1000 V. Current designs have been horizontal conduction devices based on radio frequency (RF) designs modified to operate at high voltage. These designs, however, do not scale well beyond the 1000 V operating voltage, which limits their use to low voltage, consumer electronics applications.

Odyssey Semiconductor’s unique GaN processing technology allows for the realization of vertical current conduction GaN devices which extends application voltages from 1000 V to over 10,000 V, allowing GaN devices to break out of the consumer electronics application space and into more demanding roles such as electric vehicles, industrial motor control, and energy grid applications.

Stock Snapshot

IR Contacts

Headquarters

Odyssey Semiconductor, Inc.
9 Brown Road
Ithaca, NY 14850
T: 607-882-2754
info@odysseysemi.com

Transfer Agent

VStock Transfer, LLC